... the ATCR has a wider process window Besides the technique does not degrade the gate oxide integrity and junction leakage current Next we ...
#21.
Subthreshold conduction - Wikipedia
Subthreshold conduction or subthreshold leakage or subthreshold drain current is the current ... on the device design are gate-oxide leakage and junction leakage.
#22.
collector current翻譯及用法- 英漢詞典 - 漢語網
The base current and the junction leakage current increase, while the collector current and the breakdown voltage decrease for SiGe HBTs after radiation.
#23.
How do I test a JFET for Reverse Gate Leakage on my curve ...
What It Is: Reverse gate leakage is the IG that flows at a specified VGS and with VDS=0. Since it's the reverse current across a junction, IG exhibits a knee ...
#24.
DENV NS1 and MMP-9 cooperate to induce vascular leakage ...
Thus, we reveal that DENV NS1 and MMP-9 cooperatively induce vascular leakage by impairing endothelial cell adhesion and tight junction, and suggest that ...
#25.
Improved JBS structure to reduce the leakage current and ...
Improved junction barrier Schottky (JBS) structure to reduce the leakage current and increase the surge current capability. While Schottky barrier diodes ...
#26.
低溫複晶矽薄膜電晶體中汲極漏電流抑制方法之研究 - 清華大學
論文名稱(中文):, 低溫複晶矽薄膜電晶體中汲極漏電流抑制方法之研究. 論文名稱(外文):, Study of Drain Leakage Current Suppression Method for LTPS TFTs.
#27.
junction field effect transistor - Linguee | 中英词典（更多其他 ...
大量翻译例句关于"junction field effect transistor" – 英中词典以及8百万条中文译文例句搜索。 ... and low leakage Field Effect Transistors (JFET) or CMOS [...].
#28.
漏水-翻译为英语-例句中文 - Reverso Context
There's a leak in my bedroom ceiling. f）检查管路连接处是否漏水，并紧固；. Examining the pipeline junction for leakage, and perform fastening as required;.
#30.
Junction Leakage Random Telegraph Signals in Arrays of ...
当前位置： X-MOL 学术 › IEEE Electron Device Lett. › 论文详情. Junction Leakage Random Telegraph Signals in Arrays of MOSFETs ... 中文翻译： ...
#31.
The Bipolar Junction Transistor (BJT)
For forward-active mode, the BC junction must be reverse biased, which means that Vce ... the normal leakage current in the reverse-biased BC pn junction.
#32.
LNK302D Ground Leakage Current Power Supply?
That industry makes lighting control devices mounted in wall-mounted junction boxes. Example products are wall-mounted occupancy sensors.
#33.
SBR 產品資訊
Reverse Leakage Current, Irm ... important operating characteristics are complementary between the pn-junction and the Schottky barrier diode.
#34.
MOSFET参数系统解读[兼容模式]
中文 描述. 应用系统关联参数解读 ... Thermal resistance, Junction to ambient. 结到空气热阻 ... Gate to source leakage current, forward.
#35.
Boron Analyzer 硼分析儀 - 和航貿易企業有限公司
繁體中文 · 简体中文 ... 的閘氧介電值崩潰電壓(Breakdown Voltage of Gate Oxide)、P-N接合漏電流(P-N Junction Leakage Current)等電氣特性惡化，維持產品的高良率。
In order to suppress the short channel effect and reduce leakage current, we dug out in advance the PN junction to formed the ultra thin film body, besides, in ...
#38.
中文摘要本研究針對橫向絕緣閘雙極性電晶體(LIGBT)
prevent this substrate leakage current NBL and PBL technology are used. The double reverse biased PN junction structure effectively.
#39.
SQL: SELECT * FROM this || 國家教育研究院-電機工程學術名詞
英文名稱, 中文名稱 ... reflection of junction, 接面之反射 ... refueling core for low neutron leakage, 低中子洩漏更換燃料核心. refueling machine of HWR ...
#43.
Reliability of multistacked tantalum-based structure as the ...
... photoelectron spectroscopy and reverse-biased junction leakage current. ... will improve the integrity of Cu/Ta(-N)/n+-p junction diodes to 650 °C.
#44.
eg junction中文 - Kintle
出處/學術領域英文詞彙中文詞彙學術名詞礦冶工程名詞junction 錯車軌路; 巷道交接點學術名詞 ... and pure tunneling of the PN junction, 4Channel leakage current, ...
中文 題目：Ommaya 系統外漏-病例報告和文獻複習. 英文題目：Leakage of the Ommaya system - A case report and review of the literature. 作者： 蔣京谷，謝佩穎.
#49.
Electrical Failure Analysis (EFA) - MA-tek
P-N Junction leakage; Transistor fail caused by open or short circuit; Lat-chup; Gate oxide leakage; Poly-Si filament; Substrate damage; device burn out ...
#50.
認識稽納二極體的規格與特性 - TECH ARTICLES
R thJA：Junction 與室溫的溫差(Thermal resistance junction to ambient ... IR 與VR：表示稽納在不工作的時候(膝點以下) 有多少漏電流IR (Leakage ...
#51.
Intoduction to Threading Dislocations | 學術寫作例句辭典
... of Dislocations in Graded Buffer Layers of IMM Single Junction InGaAs Solar ... the shunt current related to threading dislocations dominate PD leakage.
#52.
MOSFET參數系統解讀 - 人人焦點
Derating Factor above 25oCTSTG, TJOperating Junction Temperature ... Junction to ambient晶片到空氣的熱阻抗標識參數中文描述應用系統關聯參數 ...
#53.
SA12A - Multicomp - TVS Diode, Low Leakage, SA
#54.
Effect of reverse leakage current on the reliability of InGaN ...
Request PDF | Effect of reverse leakage current on the reliability of InGaN/GaN high power LEDs | Two groups of GaN-based blue light emitting diodes (LEDs) ...
#55.
開關電源關鍵元件的各個參數中英文對照表！（轉） - 台部落
肖特基二極管SymbolParameter中文翻譯VRRMPeak repetitive reverse voltage反向重複. ... Thermal Resistance from Junction to Ambient.
junction leakage中文 在 [問題] 一般論文所探討的leakage到底是屬於哪種? 的美食出口停車場
各位前輩好，
最近在做量測CMOS電路的漏電流有很大的迷失
即便爬過文章但還是不太理解
至今論文所探討的leakage到底指的是哪一塊?
主要都是 Subthreshold Leakage嗎
現在目前研究方向是 PLA (programmable logic array)
1.CLK=0 (Precharge) 輸入變化不影響輸出
2.CLK=1 (Evaluation) 依照輸入並將值讀出
而目前用 Hspice 測量 Leakage 的方式為以下三種:
1.CLK=floating , input=floating (任何訊號都浮接)
2.CLK=0 , input=1 (讓電路維持在precharge不做任何讀值，輸入也固定在vdd)
3.CLK=0 , input=0 (讓電路維持在precharge不做任何讀值，輸入也固定在gnd)
然而這三種方法測出來的數據讓我推論不出來
第一種全浮接的狀態，我拿已增加降低漏電流的新電路來測試，
發現全浮接的狀態漏電流的值跟最傳統的值沒有相差太多(幾乎沒變)
第二種和第三種跑出來的數據就很接近，但是拿已增加漏電流的新電路測試
就與最傳統架構的漏電流有差距
以下是我個人的想法，希望有人可以指點是否有誤
1.就我爬文，全做浮接的狀態，所測得的是 input 所看進去的漏電流，而電路是呈現無
電位狀態，因此只能測量到junction leakage? 而這就是數據沒有改變的原因?
2.使用2和3是由於Precharge將 bit line皆充電，而輸入則不做任何變化，使得 CMOS 之
間有電壓差才產生漏電流因此測量到的漏電流會隨著電路架構的改變而有所變化??
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