【Talk】(2014.5.30)Memristor Crossbar Sneak Path Problem:Challenges and Solutions
Welcome all to join it !!!
Speaker : Dr. Khaled N. Salama
Associate Professor and Founding Program Chair, EE Department, KAUST
Time : May 30, 2014(Friday) pm: 13:30- 15:00
Venue : 交通大學(光復校區)工程四館Room 528(NCTU Eng. Building 4)
Organizer: IEEE EDS NCTU Student Branch Chapter 交大學生分會
Co-Sponsor: IEEE EDS Taipei Chapter台北分會
Dr. Khaled N. Salama
Associate Professor and Founding Program Chair of Electrical Engineering,
King Abdullah University of Science and Technology (KAUST)
Kingdom of Saudi Arabia
Dr. Salama received his Bachelor's degree with honors from the Electronics and Communications Department at Cairo University in Egypt in 1997, and his Master's and Doctorate degrees from the Electrical Engineering Department at Stanford University in the United States, in 2000 and 2005 respectively. He was an assistant Professor at RPI between 2005 and 2009. He joined KAUST in January 2009 and was the founding program chair till August 2011. His work on CMOS sensors for molecular detection has been funded by the National Institutes of Health (NIH) and the Defense Advanced Research Projects Agency (DARPA), awarded the Stanford-Berkeley Innovators Challenge Award in biological sciences and was acquired by Lumina Inc. He is the author of 90 papers and 8 patents on low-power mixed-signal circuits for intelligent fully integrated sensors and nonlinear electronics specially memristor devices. He is a senior member of IEEE.
Memristor Crossbar Sneak Path Problem:Challenges and Solutions
Abstracts
The memristor (M) is considered to be the fourth two-terminal passive element in electronics, alongside the resistor (R), the capacitor (C), and the inductor (L). Its existence was postulated in 1971, but its first implementation was reported in 2008. Where was it hiding all that time and what can we do with it? Come and learn how the memristor completes the roster of electronic devices much like a missing particle that physicists seek to complete their tableaus. The memristor (memory resistor) is a promising candidate in replacing CMOS based memories and solid-state drives. Memristor-based memories are retainable and fabricated in much higher density than conventional CMOS memories. In addition, they do not need the energy-consuming refresh cycles required by the current CMOS memories. However, there are numerous challenges that need to be addressed before the memristor genuinely replaces current memory technologies, which is the motivation behind this research effort.
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